? 2001 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma 500 v v gh(th) v ds = v gs , i d = 8 ma 3.0 5.5 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c3ma r ds(on) v gs = 10 v, i d = 0.5 i d25 pulse test, t 300 s, duty cycle d 2 % 85 m ? symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 20 v v gsm transient 30v i d25 t c = 25 c55a i dm t c = 25 c, pulse width limited by t jm 220 a i ar t c = 25 c55a e ar t c = 25 c60mj e as t c = 25 c3.0j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 600 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t j 1.6 mm (0.63 in) from case for 10 s - c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13nm/lb.in. terminal connection torque 1.5/13nm/lb.in. weight 30g 98854 (8/01) d s g s s g s d minibloc, sot-227 b e153432 g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source advance technical information ixfn 55N50F v dss = 500 v i d25 = 55 a r ds(on) = 85 m ? ? ? ? ? t rr 250 ns hiperrf tm power mosfets f-class: megahertz switching n-channel enhancement mode avalanche rated, low q g, low intrinsic r g high dv/dt, low t rr features rf capable mosfets rugged polysilicon gate cell structure double metal process for low gate resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect fast intrinsic rectifier applications dc-dc converters switched-mode and resonant-mode power supplies, >500khz switching dc choppers pulse generation laser drivers advantages easy to mount space savings high power density
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixfn 55N50F symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , pulse test 22 33 s c iss 6700 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1250 pf c rss 330 pf t d(on) 24 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 20 ns t d(off) r g = 1 ? (external), 45 n s t f 9.6 ns q g(on) 195 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 50 nc q gd 95 nc r thjc 0.21 k/w r thck 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 55 a i sm repetitive; 220 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 50a, -di/dt = 100 a/ s, v r = 100 v 250 ns q rm 1.6 c i rm 13 a minibloc, sot-227 b m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004
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